[14a-A302-1~13] 15.4 III-V-group nitride crystals

[14a-A302-10] Growth process study for control of InN growth thikness at atomic layer level by DERI method

〇(M1)Naoki Goto¹, Tsutomu Araki¹, Shinichiro Mouri¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:MBE, InN

As InN has a smallest effective mass and highest mobility among Ⅲ-nitrides, it is expected to be applied for high-speed and high-frequency electronic devices. InN and rerated alloys also have attracted too much attention for longer wavelength optical devices. We have proposed DERI process to obtain high quality InN by RF-MBE. We discuss InN growth process from strain between InN and GaN interface and improvement of surface flatness by mass transport.