The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A302-1~13] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 9:00 AM - 12:30 PM A302 (6-302)

Tsutomu Araki(Ritsumeikan Univ.), Yusuke Hayashi(Mie Univ.)

9:45 AM - 10:00 AM

[14a-A302-4] Intentional doping in GaN via sputtering and its application to nitride devices

〇Kohei Ueno1, Soichiro Morikawa1, Keita Shibahara1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

Keywords:GaN, Sputtering