The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A302-1~13] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 9:00 AM - 12:30 PM A302 (6-302)

Tsutomu Araki(Ritsumeikan Univ.), Yusuke Hayashi(Mie Univ.)

10:15 AM - 10:30 AM

[14a-A302-6] Characterization of p-type GaN Schottky barrier height using vertical SBD structures

〇Keita Shibahara1, Ueno Kohei1, Kobayashi Atsushi1, Fujioka Hiroshi1,2 (1.IIS, UTokyo, 2.JST-ACCEL)

Keywords:sputtering, GaN, schottky