9:15 AM - 9:45 AM
[14a-A401-1] Oxide-channel ferroelectric-gate transistors and their memory applications
Keywords:ferroelectric, memory, transistor
Ferroelectric-gate transistors have been investigated as nonvolatile memory devices which is capable of nondestructive readout and suitable for scaling. In recent years, it has been highlighted again with the proposal of a steep-slope transistor using a ferroelectric "negative capacitance" and the discovery of ferroelectricity in the HfO2 system. In this talk, after explaining the historical background and the operating principle of ferroelectric gate transistors, we will introduce our research activities on oxide channel ferroelectric gate transistors.