[14a-A401-1~5] New functional memory devices with oxide materials and their physics

[14a-A401-2] Resistive Switching Memory using Ferroelectric Tunnel Oxide

〇Marina Yamaguchi¹, Shosuke Fujii¹, Kensuke Ota¹, Masumi Saitoh¹ (1.Kioxia)

Keywords:Ferroelectric HfO2, Ferroelectric Tunnel Junction, Non-volatile Memory

A HfO₂-based ferroelectric tunnel junction memory (HfO₂ FTJ) is attracting much attention as a future non-volatile memory device. We have demonstrated the HfO₂ FTJ with excellent characteristics such as low operation current in nA-range. This presentation will provide a solid guideline for the performance and reliability improvement of the HfO₂ FTJ, and discuss about applications of this emerging ferroelectric memory.