9:45 AM - 10:15 AM
[14a-A401-2] Resistive Switching Memory using Ferroelectric Tunnel Oxide
Keywords:Ferroelectric HfO2, Ferroelectric Tunnel Junction, Non-volatile Memory
A HfO2-based ferroelectric tunnel junction memory (HfO2 FTJ) is attracting much attention as a future non-volatile memory device. We have demonstrated the HfO2 FTJ with excellent characteristics such as low operation current in nA-range. This presentation will provide a solid guideline for the performance and reliability improvement of the HfO2 FTJ, and discuss about applications of this emerging ferroelectric memory.