[14a-A401-1~5] New functional memory devices with oxide materials and their physics

[14a-A401-3] An analytical approach to elucidating the characteristics of semiconductor memory insulating films, focusing on transmission electron microscopy

〇Naoyuki Sugiyama^1,2, Toshihide Nabatame², Fumihiko Uesugi², Takanori Naijou¹, Naohiko Kawasaki¹ (1.Toray Research Center, 2.NIMS)

Keywords:semiconductor memory, electron microscopy, evaluation

An insulating film used for a semiconductor memory is one of the major factors that influence the characteristics of the memory. Therefore, it is essential to appropriately analyze and evaluate the properties (thickness, crystallinity, composition) for improving the characteristics of the memory. Here, using the HfO2-based ferroelectric thin film and the charge trapping film (ONO film) used in NAND flash memory as an example, some examples of evaluation to elucidate the characteristics of the insulating film are shown, focusing on the transmission electron microscope technology, which is remarkably advanced.