Symposium (Oral)

[14a-A401-1~5] New functional memory devices with oxide materials and their physics

Sat. Mar 14, 2020 9:15 AM - 11:55 AM A401 (6-401)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:45 AM

[14a-A401-1] Oxide-channel ferroelectric-gate transistors and their memory applications

〇Eisuke Tokumitsu¹ (1.JAIST)

9:45 AM - 10:15 AM

[14a-A401-2] Resistive Switching Memory using Ferroelectric Tunnel Oxide

〇Marina Yamaguchi¹, Shosuke Fujii¹, Kensuke Ota¹, Masumi Saitoh¹ (1.Kioxia)

10:15 AM - 10:45 AM

[14a-A401-3] An analytical approach to elucidating the characteristics of semiconductor memory insulating films, focusing on transmission electron microscopy

〇Naoyuki Sugiyama^1,2, Toshihide Nabatame², Fumihiko Uesugi², Takanori Naijou¹, Naohiko Kawasaki¹ (1.Toray Research Center, 2.NIMS)

10:55 AM - 11:25 AM

[14a-A401-4] Oxide Charge Trap Memory

〇Mutsunori Uenuma¹, Takanori Takahashi¹, Yukiharu Uraoka¹ (1.NAIST)

11:25 AM - 11:55 AM

[14a-A401-5] Theoretical Studies on the Physical Properties of MONOS Charge Trap Memories

〇Kenji Shiraishi¹ (1.Nagoya Univ.)

Symposium (Oral)

[14p-A401-1~4] New functional memory devices with oxide materials and their physics

Sat. Mar 14, 2020 1:30 PM - 3:30 PM A401 (6-401)

yuuichiro mitani(KIOXIA Corporation)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[14p-A401-1] DRAM Scaling Trend and Functional Oxide Process Technologies for Memory Devices

〇Yoshihiro Hirota¹ (1.Tokyo Electron Ltd.)

2:00 PM - 2:30 PM

[14p-A401-2] Functional Oxide Films and Their Process Technologies for Memory Devices

〇Yasutoshi Tsubota¹, Tsukasa Kamakura¹, Masaru Kadoshima¹, Hiroshi Ashihara¹, Jiro Yugami¹ (1.KOKUSAI ELECTRIC Corp.)

2:30 PM - 3:00 PM

[14p-A401-3] Nonvolatile and Low-power FPGA using Atom Swtich

〇Munehiro Tada¹ (1.NEC Corporation)

3:00 PM - 3:30 PM

[14p-A401-4] Resistance switching phenomena in metal oxides and device applications

〇Kentaro Kinoshita¹ (1.Tokyo Univ. of Science)

Sessions

Symposium » New functional memory devices with oxide materials and their physics