[14a-A401-1~5] New functional memory devices with oxide materials and their physics

[14a-A401-1] Oxide-channel ferroelectric-gate transistors and their memory applications

〇Eisuke Tokumitsu¹ (1.JAIST)

Keywords:ferroelectric, memory, transistor

Ferroelectric-gate transistors have been investigated as nonvolatile memory devices which is capable of nondestructive readout and suitable for scaling. In recent years, it has been highlighted again with the proposal of a steep-slope transistor using a ferroelectric "negative capacitance" and the discovery of ferroelectricity in the HfO₂ system. In this talk, after explaining the historical background and the operating principle of ferroelectric gate transistors, we will introduce our research activities on oxide channel ferroelectric gate transistors.