[14a-A404-3~11] 17.3 Layered materials

[14a-A404-9] Theoretic Study on Raman Active Modes of SnS Thin Films

〇(M1)Itsuki Yonemori¹, Sudipta Dutta², Kosuke Nagashio³, Katsunori Wakabayashi¹ (1.Kwansei Gakuin Univ., 2.IISER Tirupati, 3.Tokyo Univ.)

Keywords:Tin Sulfide, First-principles calculaiton, Raman mode

We study the optimized structure, electronic states of tin sulfide (SnS) thin films using VASP within GGA-PBE approximation. The layer-number depedence of Raman active phonon modes is analyzed to compare the recent experimental data.