[14a-A409-1~7] 12.4 Organic light-emitting devices and organic transistors

[14a-A409-6] Development of anti-ambipolar transistors Part Ⅱ: Approaches to operation voltage reduction

〇Kota Fuchii^1,2, Ryoma Hayakawa¹, Kazuyoshi Kobashi^1,3, Yoichi Yamada², Yutaka Wakayama^1,3 (1.NIMS, 2.Tsukuba Univ., 3.Kyusyu Univ.)

Keywords:Anti-ambipolar transistor, Operation voltage reduction, Surface and interface engineering

Flexible and high-performance organic transistors hold promise in the Internet of Things (IOT) society. In this regard, we developed a new transistor that is called as anti-ambipolar transistor: AAT). Of importance is that the transistor achieved a negative resistance even at room temperature, where the drain current rapidly increases and decreases with increasing gate voltage. Furthermore, we demonstrated a multivalued logic operation by combination of an AAT and a conventional organic transistor. These achievements have a potential to improve the data processability of current organic integrated circuits. In this study, we present the following approaches to reduce the operation voltage of the AAT: 1) effect of interface layers underneath source and drain electrodes, 2) adoption of high-k gate insulator, and 3) impact of coating layers on gate insulators.