[14a-A410-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[14a-A410-8] Injected photon density dependence of the surface recombination velocity for polar face of 4H-SiC

〇Lei Han¹, Tomohisa Kato², Masashi Kato¹ (1.NITech, 2.AIST)

Keywords:4H-SiC, surface recombination velocity, Dependence on injected photon number

The value of carrier lifetime is an important parameter that affects device performance in SiC bipolar devices. In addition, surface recombination exists in the limiting factor of carrier lifetime, and obtaining a quantitative value is indispensable for device design. In this study, we analyzed the dependence of the surface recombination velocity S on the number of injected photons on the polar surface of 4H-SiC by μ-PCD and TRFCA method.