The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 9:00 AM - 12:00 PM B401 (2-401)

Kenji Shiojima(Univ. of Fukui)

11:45 AM - 12:00 PM

[14a-B401-11] Investigation of activation anneal for selective p-GaN layer.

Kenta Watanabe1, Hiroko Iguchi2, Maito Shiraishi3, Taisei Miyazaki3, Ryusui Wada3, Masato Omori3, Takashi Okawa1, Yoshitaka Nagasato1 (1.Toyota Motor Corp., 2.Toyota Inst., 3.Oita Univ.)

Keywords:semiconductor, GaN, Ion implantation