[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

[14a-B401-2] Effects of carbon impurities and nonradiative recombination centers for quantum efficiency of radiation in GaN crystals

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Hajime Fujikura², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Sciocs Co. Ltd.)

Keywords:ODPL, GaN, Carbon impurity