[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

[14a-B401-6] Hall-effect measurements of Mg implanted GaN layers annealed at standard pressure

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹, Masahiro Horita², Jun Suda² (1.Fuji Electric, 2.Nagoya Univ.)

Keywords:Gallium Nitride, Ion implantation, Hall effect

We report on the temperature dependence of the Hall-effect measurements of Mg-implanted GaN layers activated at standard pressure. N was sequentially implanted into the Mg implanted layer to improve activation. In order to perform stable measurement, p+ epitaxial layer was used as a contact layer.
As a result, the p-type conductivity of the Mg ion-implanted layer and the temperature dependence of the hole concentration was clearly confirmed. The hole characteristics of the implanted layer with Mg concentration of about 3E18 cm^-3 were almost the same as those of the p-type epitaxial layer with Mg concentration of 3.9E17 cm^-3 at low temperature.