Development of AlGaN-based ultra-high UV(260nm)/VIS rejection photodetector

Tadao Tanabe; Takahiro Okumura; Mizuki Tanaka; Ryuichi Toba; Takahiro Ohashi; Yutaka Oyama

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[14a-B410-1~10] 3.13 Semiconductor optical devices

Sat. Mar 14, 2020 9:30 AM - 12:15 PM B410 (2-410)

Masakazu Arai(Univ. of Miyazaki), Kiyoto Takahata(Waseda univ.)

9:30 AM - 9:45 AM

[14a-B410-1] Development of AlGaN-based ultra-high UV(260nm)/VIS rejection photodetector

〇Tadao Tanabe¹, Takahiro Okumura¹, Mizuki Tanaka¹, Ryuichi Toba², Takahiro Ohashi², Yutaka Oyama¹ (1.Tohoku Univ. Eng., 2.Tohoku Univ. environment)

Keywords:deep ultraviolet, photo-detector, AlGaN

Schottky photodiodes were fabricated from multilayer AlGaN wafer. The device showed maximum responsivity at the wavelength of 260 nm. The responsivity at 630 nm which is visible light is compared with the maximum responsivity as wavelength selection ratio. The result achieves 3.4×10⁵.