[14a-B508-1~11] 7.1 X-ray technologies

▲ [14a-B508-9] Cleaning of Sn layer in hydrogen plasma induced by intense pulsed EUV radiation

〇Nozomi Tanaka¹, Baojun Zhu¹, Chang Liu¹, Kyung Sik Kang², Youngduk Suh², Jeong-Gil Kim², Ken Ozawa³, Takeshi Takagi³, Minoru Kubo³, Shinsuke Fujioka¹ (1.ILE Osaka Univ., 2.Mechatronics R&D Center, Samsung Electronics Co. Ltd., 3.Samsung R&D Institute Japan)

Keywords:EUV source, Hydrogen plasma, Sn layer

It has been known that the excited states of hydrogen atoms, which are also called as “hydrogen radicals” play an important role for the cleaning of this Sn contamination layer on the multilayer mirrors in the EUV sources. We have developed a testbed consists with a Xe EUV source and a hydrogen gas cell to study the production process of the EUV induced radicals and cleaning effects. The detailed design of the experiments, characteristic of EUV radiation, and Sn layer sample preparation will be presented in the talk.