The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Plasma nanotechnology

[14a-D311-1~5] 8.3 Plasma nanotechnology

Sat. Mar 14, 2020 9:00 AM - 10:15 AM D311 (11-311)

Kunihiro Kamataki(Kyushu University)

9:30 AM - 9:45 AM

[14a-D311-3] Radical Nitridation of Silicon by Gold Nanoparticle Plasmon and SiON film property

Machiko Miyake1, Shoma Kuwata1, 〇Takeshi Kitajima1, Toshiki Nakano1 (1.Nat. Def. Acad.)

Keywords:plasma, plasmon, hot electron

We have applied the electrons emitted by the plasmons of the gold nanoparticles under light irradiation to the plasma surface reaction to reduce the damage to the plasma irradiated surface due to ion bombardment and to utilize them for the formation of high quality ultrathin films. In this study, we investigated the relationship between the leakage current at a DC voltage of 1 V and the equivalent oxide thickness by mercury probe measurement. Light irradiation on the gold nanoparticles promoted the formation of Si-N bonds due to the effect of surface plasmons, and significantly improved the film quality.
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