[14a-D411-1~7] 6.5 Surface Physics, Vacuum

[14a-D411-2] Simulation of Surface-Diffusion-Driven Evolution by Phase-Field Modeling

〇Koichi Sudoh¹ (1.Osaka Univ.)

Keywords:structural change, surface diffusion, silicon

When micro-structures fabricated on Si substrates are annealed at high temperatures under non-oxidizing atmosphere, their shapes spontaneously change by surface diffusion. Such spontaneous shape changes are expected to be applied for the fabrication of various semiconductor devices. In this study, we performed numerical simulations of the surface-diffusion-driven evolution using phase-field modeling. We show that the experimentally observed shape changes involving topological changes are successfully reproduced by the phase field simulation.