The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.5 Surface Physics, Vacuum

[14a-D411-1~7] 6.5 Surface Physics, Vacuum

Sat. Mar 14, 2020 10:00 AM - 12:00 PM D411 (11-411)

Kei Mitsuhara(Ritsumeikan Univ.)

10:00 AM - 10:15 AM

[14a-D411-1] Thermal image analysis of the formation process of silicon protrusions in surface liquid phase epitaxy under locally applied tensile stress

Takashi Nishimura1, Fumiya Isobe1, Masahiko Tomitori2 (1.Suzuka college, 2.JAIST)

Keywords:surface liquid phase epitaxy, thermal image analysis

局所応力印加下でSi(100)ウェーハを1280℃程度に1秒間,通電加熱すると局所的に表面融液が形成し,その融液がエレクトロマイグレーションにより通電電流方向へ移送され,低温域で液相エピ成長し突起構造が形成された.成長後の表面構造をSEM観察すると,直径410 μmΦ程度の溶融痕と高さ58μmの突起構造が存在した.今回,局所表面液相エピ成長の成長過程を熱画像カメラで解析し,表面突起構造の形成過程を調べた.

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