[14a-D419-1~12] 6.1 Ferroelectric thin films

[14a-D419-1] Effect on crystal structure and the dielectric properties of HfO₂:Y/Si films by oxygen partial pressure during deposition

〇Yuki Saho¹, Kenshi Takada¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref Univ.)

Keywords:Ferroelectric material, HfO2, Dielectric property

Among the ferroelectric materials, HfO2-based ferroelectrics exhibit ferroelectricity even in ultrathin films of 10 nm or less by introducing an appropriate amount of oxygen vacancy and stabilizing the rectangular phase in addition to the effects of doping and film thickness. [1] The compatibility with the CMOS process is also attracting attention. However, problems such as characteristics distribution between devices due to polycrystalline film growth and increase in threshold voltage caused by formation of an interface layer at the HfO2 / Si interface have become apparent [2]. Therefore, the technique of epitaxially growing rectangular HfO2 directly on Si is important. In this talk, we investigated the effect of oxygen partial pressure during growth on the crystal structure and dielectric properties of HfO2: Y / Si thin films.