[14a-D419-1~12] 6.1 Ferroelectric thin films

[14a-D419-2] Al2O3 Atomic Layer Deposition Using a Novel High Concentration H2O2 gas
Delivery System (Peroxidizer®)

Gaku Tsuchibuchi¹, 〇Tadaki Mizuno¹, Keisuke Andachi¹, Hayato Murata¹, Katsumasa Suzuki¹, Daniel Alvarez Jr.², Jeffery Spiegelman² (1.TAIYO NIPPON SANSO Corp., 2.RASIRC inc.)

Keywords:Al2O3, ALD, H2O2

H2O2 gas is a promising candidate as oxidants for the next generation semiconductor manufacturing process. In this study, we have considered applying H2O2 gas to ALD process. In general, ALD enables to deposit conformal films, but its throughput is limited. Our approach using high-concentration H2O2 gas delivery system, Peroxidizer®, allows to achieve both high film quality and high throughput. In the case of Al2O3 ALD at 300°C using H2O2/H2O mixture, its growth rate were improved by 10% compared with the case of H2O.