[14a-PA2-1~18] 9.2 Nanoparticles, Nanowires and Nanosheets

[14a-PA2-16] Photoanode using GaAs nanowires grown on silicon substrates

〇Tomoki Ono¹, Mitsuki Yukimune¹, Ryo Fujiwara¹, Fumitaro Ishikawa¹, Yongjie Wang², Zetian Mi² (1.Ehime Univ., 2.Michigan Univ.)

Keywords:semiconductor nanowire

Photoelectrochemistry for obtaining fuel from sunlight is expected as a technology for realizing a sustainable energy society in the future. The pursuit of efficient photoanode and photocathode is indispensable for its realization. III-V semiconductor nanowires have high electron mobility and photoelectric conversion efficiency among materials, and are expected for this photoelectrochemical application. We report the results of a photoenode application of a GaAs nanowire with a band gap of 1.4 eV, which is expected to have excellent photocarrier response to sunlight.