[14a-PA2-1~18] 9.2 Nanoparticles, Nanowires and Nanosheets

[14a-PA2-17] Fabrication of GaAs / AlGaAs core-shell type nanowires with high Al concentration AlGaAs on the outermost shell

〇Rikuo Tsutsumi¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

Keywords:nanowire, AlGaAs

We fabricated GaAs / AlGaOx: semiconductor / oxide heterostructure nanowires by selective oxidation of compound semiconductor GaAs / AlGaAs core-shell nanowires. In the GaAs / AlGaAs nanowires studied in this study, it has been confirmed that the outermost AlGaOx obtained by oxidation has white emission. We think that this can be applied as a white light source by increasing the area and increasing the efficiency.