[14p-A302-1~18] 15.4 III-V-group nitride crystals

[14p-A302-3] Characterization of ScAlMgO₄ crystal by CZ method to grow GaN epitaxal film

〇Takashi Fujii^1,4, Yuji Shiraishi¹, Toki Nanto¹, Tsuguo Fukuda¹, Hiroyuki Iechi², Ryo Endoh³, Ryuichi Sugie³ (1.Fukuda Crystal Lab., 2.Nippon Univ., 3.TRC, 4.Katsura opt.)

Keywords:SAM, GaN, single crystal

We reported that ScAlMgO₄ (SAM) shingle crystals of 75mm in diameter were grown by CZ method. Furthermore, dislocation-free SAM of 50mm in diameter were grown and characterized using X-ray topography. In this report, we analyzed the several properties of SAM, such as, the crystal composition, the impurities, the elastic constant, the modulus of elasticity, the specific heat the optical performance and X-ray analysis. In addition to that, we were grown the GaN epitaxial films on SAM using MOCVD Method.