[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-1] HZO thin film grown by mist chemical vapor deposition and evaluation of their electrical characteristics

〇(B)Yuki Fujiwara¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:hafnium zirconium oxide, mist CVD, ferroelectric

We have prepared mist CVD-derived Hf_xZr_1-xO₂(HZO) thin films, for the first time, with 20-nm thickness on n⁺ -Si(100) with growth temperature of 400 ^oC. Especially, the dependence of Zr composition ratio on physical and electrical properties was investigated. First, from GIXRD, the HZO crystalline peak position was varied dependent on the Zr ratio. Second, Pt/HZO/n⁺ -Si stacked capacitors were made and measured for their electrical properties, showing their ferroelectric hysteresis loops and that 2P(E=0) was maximized at x=~0.5.