[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-12] Evaluation of Charge Distribution at MOS Interface Toward Deep Understanding of Device Operation of Ferroelectric FETs

〇Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:Ferroelectric FET, Evaluation techinque, Device operation

FeFET is a MOSFET-based device which has a ferroelectric thin film as a gate insulator. In spite of rapidly increasing interest, the device operation of FeFETs is still not fully understood, including how charges are induced at the semiconductor interface by the large spontaneous polarization, in an order of 10 uC/cm², ferroelectric insulator. In this presentation, we propose a new technique to evaluate the charge distribution at the MOS interface and discuss the device operation of FeFETs.