[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-13] Study on device design of a ferroelectric tunnel junction for large-scale integration

〇Hidemasa Yoshimura¹, Fei Mo¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, Univ. of Tokyo, 2.d.lab Univ. of Tokyo)

Keywords:memory, ferroelectric

Ferroelectric tunnel junction memories (FTJ) have large capacity and low power consumption. FTJ is expected to have asymmetry and non-linearity in the current-voltage characteristics, and there is a possibility that a memory can be configured without a selector. We calculated the current-voltage characteristics of FTJ by numerical calculation and systematically investigated the effect of the device structure on the characteristics.