Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

Mohit Mohit; Jyotish Patidar; Ken-Ichi Haga; Eisuke Tokumitsu

Presentation information

Oral presentation

Code-sharing Session » 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

Sat. Mar 14, 2020 1:45 PM - 5:30 PM A303 (6-303)

Norifumi Fujimura(Osaka Pref. Univ.), Eisuke Tokumitsu(JAIST)

2:30 PM - 2:45 PM

▼ [14p-A303-4] Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

〇(D)Mohit Mohit¹, Jyotish Patidar¹, Ken-Ichi Haga¹, Eisuke Tokumitsu¹ (1.School of Materials Science, JAIST)

Keywords:Hafnium dioxide, Solution process, Buffer layer

Ferroelectric Yttrium doped HZO (Y-HZO) thin films were fabricated by CSD with and without ZrO2 and YSZ buffer layers on a Pt/Ti/SiO2/Si substrate. The ferroelectric nature of Y-HZO films fabricated by the CSD method was demonstrated from P-E and C-V measurements.