[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14p-A305-8] Development of non-destructive interface state density measurement technique by pulsed photoconductive method

〇Takuma Yamashita¹, Abe Narumi¹, Kumagae Yuki¹, Obana Hiroki¹, Hamada Tatsuki², Yoshii ryo², Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka masao² (1.Graduate school of science and technology Kumamoto Univ, 2.Kumamoto Univ)

Keywords:Pulse Photoconductivity Method, Interface states

In recent years, the size of semiconductor devices such as image sensors has been reduced in size, and the state of the interface between the semiconductor and the insulator has a bad influence on the device. With current technology, it is necessary to measure the number of interface states after the completion of the device manufacturing process, and it takes time to know the state of the interface after forming the insulating film. Therefore, we aim to establish a non-destructive and non-contact measurement technique in a short time using the pulsed photoconductive method.