[14p-A404-1~9] 17.2 Graphene

[14p-A404-3] Fabrication of high-quality graphene/hBN devices by the bubble-free transfer technique

〇Takuya Iwasaki¹, Kosuke Endo^1,2, Eiichiro Watanabe¹, Daiju Tsuya¹, Yoshifumi Morita³, Shu Nakaharai¹, Yutaka Noguchi², Yutaka Wakayama¹, Kenji Watanabe¹, Takashi Taniguchi¹, Satoshi Moriyama¹ (1.NIMS, 2.Meiji Univ., 3.Gunma Univ.)

Keywords:transfer technique for two-dimensional material, graphene/hBN stacking heterostructure, quantum Hall effect

Interficial bubbles are unintentionally induced between the layers during the conventional transfer process, which limit the material quality and the device design. Here, we show a bubble-free transfer technique by which high-quality graphene/hexagonal boron nitride (hBN)-based devices are realized.