[14p-A405-1~15] 22.1 Joint Session M "Phonon Engineering"

[14p-A405-4] Phonon Dispersion Study in Si_1-xGe_x Thin Films by Inelastic X-ray Scattering

〇Akira Nambu¹, Hiroshi Uchiyama², Shin Yabuuchi¹, Katsuya Oda¹, Jun Hayakawa¹ (1.R & D Group, Hitachi, ltd., 2.JASRI)

Keywords:Phonon Dispersion, Inelastic X-ray Scattering, Thermal conduction

We report the results of phonon dispersion evaluation of single-crystal Si_1-xGe_x (X = 0.1, 0.2) thin films using Inelastic X-ray Scattering (IXS). The dispersions of acoustic phonons along Γ-Χ point were evaluated, and the phonon line width expansion near Χ point and the dispersionless phonon mode around 15 meV over the entire measurement region were observed (which were not observed in pure Si). We will discuss those observed results in our presentation.