The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Tetsuya Suemitsu(Tohoku Univ.), Taketomo Sato(Hokkaido Univ.)

1:30 PM - 1:45 PM

[14p-B401-1] Temperature dependence of the effective mobility of GaN-MOSFETs

Katsunori Ueno1, Hideaki Matsuyama1, Takuro Inamoto1, Ryo Tanaka1, Yuta Fukushima1, Shinya Takashima1, Masaharu Edo1 (1.Fuji Electric)

Keywords:GaN, MOSFET, mobility

In order to research the limiting factor of the MOS channel mobility on GaN, we observed the temperature dependence of the MOS channel mobility. In the low field region, the mobility decreases according to the temperature decrease, it slightly increases in the high field region. These indicate that the Coulomb scattering is the main factor for the low field and the acoustic phonon or the optical phonon may limit the mobility in the high field too. We will discuss the difference of the fitting parameters between samples with different mobility.