The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[14p-D221-1~16] 6.2 Carbon-based thin films

Sat. Mar 14, 2020 1:45 PM - 6:15 PM D221 (11-221)

Junko Hayase(Keio Univ.), Masazumi Fujiwara(大阪市立大)

2:15 PM - 2:30 PM

[14p-D221-3] Temperature Dependence of Photoluminescence from Heavy Group-IV Color Centers in Diamond

〇(M1)PENG WANG1, Takashi Taniguchi2, Yoshiyuki Miyamoto3, Mutsuko Hatano1, Takayuki Iwasaki1 (1.Tokyo Institute of Technology, 2.NIMS, 3.AIST)

Keywords:diamond, SnV center, PbV center

Color centers in diamond are promising candidates for quantum network applications. Compared with nitrogen-vacancy (NV) center, color centers based on group-IV elements (SnV as representative), show sharp ZPLs with suppressed phonon side bands. In this study, we report the detailed temperature behavior of the fluorescence from the SnV in diamond, and also from a heavier element center, called lead-vacancy (PbV) centers. At cryogenic temperatures, the split ground and excited states of SnV center give rise to four optical transition paths. With increasing temperature, the four obvious peaks merge into two, then into a single broaden peak. The peak shifts of those transition take on the same tendency: relatively flat at low temperatures and decreasing rapidly after a threshold temperature. We also observed the similar temperature-dependent behavior in PbV centers.