[14p-D221-1~16] 6.2 Carbon-based thin films

[14p-D221-5] Influence of P1 Concentration on NV Center Formation by Electron Irradiation

〇Shinobu Onoda¹, Seiichi Saiki¹, Yuta Masuyama¹, Shyuya Ishii¹, Masashi Miyakawa², Takashi Taniguchi², Kenji Watanabe², Tokuyuki Teraji², Yuki Kamitsubo³, Takeharu Sekiguchi³, Mutsuko Hatano^1,3, Junichi Isoya⁴, Takeshi Ohshima¹ (1.QST, 2.NIMS, 3.Tokyo Inst. Tech., 4.Univ. of Tsukuba)

Keywords:NV center, Electron irradiation, ESR

The electron beam irradiation is useful to create dense NV (Nitrogen-Vacancy) centers in diamond. Firstly, the vacancies are introduced by 2 MeV electron irradiation. Secondly, the substitutional nitrogen atoms (P1 centers) are combined with vacancies by high temperature treatment. In this study, the charge state and total amount of NV centers as a function of fluence was evaluated to cralify the influence of P1 concentration on NV center formation. NV⁰ and NV^- were formed in the sample with the initial P1 center concentration of 0.8 ppm, and only NV^- was formed in the sample with the initial P1 center concentration of 100 ppm.