[14p-PB3-1~8] 3.15 Silicon photonics and integrated photonics

[14p-PB3-8] High-Q Silicon Nanocavities fabricated with binary mask and halftone mask

〇(B)Yuki Takahashi¹, Takamasa Yasuda¹, Makoto Okano², Minoru Ohtsuka², Miyoshi Seki², Nobuyuki Yokoyama², Yasushi Takahashi¹ (1.Osaka Prefecture Univ., 2.AIST)

Keywords:binary mask, halftone mask, High-Q Silicon Nanocavities

We have reported a large-scale fabrication of silicon nanocavities with an average Q factor of 1.9 million using a CMOS process and an ultra-low threshold silicon Raman laser. In order to improve the performance of these devices, it is important to improve the fabrication accuracy. There are two main types of photomasks: binary masks and halftone masks. It is important to examine whether there is a difference in the fabrication accuracy between the two. In this paper, we report on the fabrication accuracy of silicon nanocavities fabricated with two types of photomasks.