The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Takeshi Tawara(富士電機)

9:45 AM - 10:00 AM

[15a-A201-3] Structural analysis of expanded mixed type stacking faults boundary induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

Hideaki Teranishi1, Youhei Kagoyama1, Masaki Miyazato1 (1.Fuji Electric)

Keywords:SiC, stacking fault, STEM

A pn diode structure was formed after epitaxial growth on a highly nitrogen doped 4H - SiC substrate. The metal electrode was removed after applying bipolar current. After that, expansion of two types of stacking faults with different emission wavelengths were detected by PL measurement. The structure of these stacking faults was identified using spherical aberration correction STEM. It was found that the structure of these stacking faults was such that the single Shockley-type stacking fault and the double Shockley-type stacking fault were in contact on the same basal plane.