Hideaki Teranishi

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

[15a-A201-3] Structural analysis of expanded mixed type stacking faults boundary induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Youhei Kagoyama¹, Masaki Miyazato¹ (1.Fuji Electric)