[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-3] Structural analysis of expanded mixed type stacking faults boundary induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Youhei Kagoyama¹, Masaki Miyazato¹ (1.Fuji Electric)

Keywords:SiC, stacking fault, STEM

A pn diode structure was formed after epitaxial growth on a highly nitrogen doped 4H - SiC substrate. The metal electrode was removed after applying bipolar current. After that, expansion of two types of stacking faults with different emission wavelengths were detected by PL measurement. The structure of these stacking faults was identified using spherical aberration correction STEM. It was found that the structure of these stacking faults was such that the single Shockley-type stacking fault and the double Shockley-type stacking fault were in contact on the same basal plane.