[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:30 AM

[15a-A201-1] [The 10th Promotion and Nurturing of Female Researchers Contribution Award] Research of SiC crystal defect for highly reliable SiC power device

〇Kumiko Konishi¹ (1.Hitachi, Ltd.)

9:30 AM - 9:45 AM

[15a-A201-2] Partial dislocation analysis of single Shockley stacking faults expanded from different origins on 4H-SiC PiN diodes

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

9:45 AM - 10:00 AM

[15a-A201-3] Structural analysis of expanded mixed type stacking faults boundary induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Youhei Kagoyama¹, Masaki Miyazato¹ (1.Fuji Electric)

10:15 AM - 10:30 AM

[15a-A201-4] Electrical Resistivity and Hall Coefficient in Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3.

〇(B)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

10:30 AM - 10:45 AM

[15a-A201-5] Anomalous Conduction in Heavily Al-Doped p-Type 4H-SiC with Al Concentration of First Half of 10¹⁹ cm^-3

〇Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Kohei Ogawa¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Takeshi Mitani², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication University, 2.AIST Advanced Power Electronics Research Center)

10:45 AM - 11:00 AM

[15a-A201-6] Characterization of 4H-SiC wafer using a Laser Terahertz Emission Microscope at 400 nm

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama^2,3, Masayoshi Tonouchi², Takuji Hosoi⁴, Takayoshi Shimura⁴, Heiji Watanabe⁴ (1.SCREEN, 2.ILE, Osaka Univ., 3.Kyoto Univ., 4.Graduate School of Eng., Osaka Univ.)

11:00 AM - 11:15 AM

[15a-A201-7] Non-destructive Measurement of Electrical Properties of Ion Implanted 4H-SiC Wafer with 3 Layers

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Koutaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

11:15 AM - 11:30 AM

[15a-A201-8] Elucidation of Ohmic Contact Formation Mechanism of 4H-SiC with Silicon-Cap-Annealing

〇Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

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