[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-7] Non-destructive Measurement of Electrical Properties of Ion Implanted 4H-SiC Wafer with 3 Layers

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Koutaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

Keywords:silicon carbide, ion implantation, Terahertz time domain spectroscopy ellipsometry

Our group plan to characterize electrical properties of ion implanted 4H-SiC wafer with 3 layers using non-destructive measurement. This presentation, we characterized electrical properties of As-Implantation samples with THz-TDSE. As-Implantation sample’s profiles increased comparing As-Grown sample’s profiles 1 to 3 THz ranges. This tendency of profiles is almost same regardless of implantation temperature and implantation types. These increases are considered to due to expanding refractive index width of ion implanted layer. We’ll examine improvement of this samples by annealing.