Analysis of efficiency droop phenomena in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons

Hideaki Murotani; Hiroyuki Miyoshi; Ryohei Takeda; Hiroki Nakao; Satoshi Kurai; Kahn M. Ajmal; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 9:00 AM - 12:15 PM A302 (6-302)

Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

11:15 AM - 11:30 AM

[15a-A302-9] Analysis of efficiency droop phenomena in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons

〇Hideaki Murotani¹, Hiroyuki Miyoshi², Ryohei Takeda², Hiroki Nakao², Satoshi Kurai², Kahn M. Ajmal³, Noritoshi Maeda³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada² (1.NIT, Tokuyama Coll., 2.Yamaguchi Univ., 3.RIKEN)

Keywords:AlGaN, exciton, IQE