[15a-A305-1~13] 13.3 Insulator technology

[15a-A305-1] Theoretical study on emitted Si in Si oxide films

〇Hiroyuki Kageshima¹, Yuji Yajima¹, Kenji Shiraishi², Tetsuo Endoh³ (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ.)

Keywords:Si oxidation, First-principles calculation

Thermal oxidation of Si forms not only a pure SiO₂ film but also Si-related interstitials in the film, because the large compressive stress due to the volume expansion must be released by the Si emission into the oxide. We have considered that this Si-related interstitial has a form of SiO. In this contribution, we present supporting materials for SiO formation in SiO2 films, based on our first-principles study for Si missing in oxidation of Si pillars.