Electric propertes of anodic SiO2 film oxidized in high-pressure steam

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Sun. Mar 15, 2020 9:00 AM - 12:30 PM A305 (6-305)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo)

9:15 AM - 9:30 AM

〇Takumi Katata¹, Masaki Tsunoda¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

Keywords:anodic oxidation, high-pressure steam, SiO2 films