10:15 AM - 10:30 AM
▲ [15a-A305-6] Evaluation of doping concentration of MoS2 via Schottky diode for the Terman method
Keywords:MoS2, the Terman method, Doping concentration
The Terman method has been adopted to evaluate the density of interface traps (Dit) by fabricating thick-body MoS2 MOS capacitors. However, the unknown doping concentration (Nd) of MoS2 made the Dit analysis inaccurate. Therefore, in this study, in order to figure out the doping concentration of natural MoS2 crystal, we propose to use a thick-body MoS2 Schottky diode. Owing to the thick-body MoS2, we can use the regular C-V measurement to extract the doping concentration. Using the extracted doping concentration, the Terman method is applied to extract the energy distribution of Dit of MoS2 MOS interface.