[15a-A305-1~13] 13.3 絶縁膜技術

▲ [15a-A305-6] Evaluation of doping concentration of MoS₂ via Schottky diode for the Terman method

〇Xiaoxuan Zhang¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.Univ. Tokyo)

キーワード：MoS2, the Terman method, Doping concentration

The Terman method has been adopted to evaluate the density of interface traps (D_it) by fabricating thick-body MoS₂ MOS capacitors. However, the unknown doping concentration (N_d) of MoS₂ made the D_it analysis inaccurate. Therefore, in this study, in order to figure out the doping concentration of natural MoS₂ crystal, we propose to use a thick-body MoS₂ Schottky diode. Owing to the thick-body MoS₂, we can use the regular C-V measurement to extract the doping concentration. Using the extracted doping concentration, the Terman method is applied to extract the energy distribution of D_it of MoS₂ MOS interface.