[15a-A305-1~13] 13.3 Insulator technology

△ [15a-A305-8] Correlation between the temperature dependence of Al₂O₃/SiO₂ interface dipole layer strength with the density of oxides

〇Takashi Hamaguchi¹, Koji Kita¹ (1.Tokyo Univ.)

Keywords:Interface dipole layer

It is important to control operation temperature dependence of hetero-oxides interface dipole layer strength for the devices used in wide range of temperature. We investigated the correlation between the temperature dependence of interface dipole layer strength with the film quality of oxides. It was suggested that positive temperature coefficient of Al₂O₃/SiO₂ interface dipole layer strength was pronounced only when both oxides had lower density. It was also indicated that the chemical states and mixing of Si and Al atoms near the interface had little effect on operation temperature dependence of the dipole layer strength.