The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[15a-D311-1~12] 6.3 Oxide electronics

Sun. Mar 15, 2020 9:00 AM - 12:15 PM D311 (11-311)

Shinobu Ohya(Univ. of Tokyo)

9:15 AM - 9:30 AM

[15a-D311-2] High performance electric double layer transistors using solvate ionic liquids

Shimpei Ono1, Satoshi Saito2, Ryota Tamate2, Kazumoto Miwa1, Sunao Shimizu1, Tatsuhiro Horii2, Masayoshi Watanabe2 (1.CRIEPI, 2.Yokohama National Univ.)

Keywords:Ionic liquid gating

We report electrochemical properties of a Li+-based solvate ionic liquid (SIL) and its application to gate dielectrics for electric double layer transistors (EDLTs). It is found that the electric double layer capacitance of the SIL increases with strengthening the negative polarization of the working electrode due to the possible desolvation of the cations in the SIL. The transfer characteristics of a SrTiO3-based EDLT show a dramatic improvement when the SIL is used for the gate dielectric. The present result proposes a guideline to high performance gate dielectrics for EDLTs, leading to the development of iontoronics research with semiconductor devices.