[15a-D311-1~12] 6.3 Oxide electronics

▲ [15a-D311-4] Cathodoluminescence study of oxygen vacancy migration along dislocation in SrTiO₃

〇JUN CHEN¹, WEI YI¹, PENG WANG¹, SHUN ITO², TAKASHI SEKIGUCHI^1,3 (1.NIMS, 2.Tohoku Univ., 3.Tsukuba Univ.)

Keywords:Cathodoluminescence, Oxygen vacancy, SrTiO3

Oxygen vacancies behave as n-type dopants in SrTiO₃. Previous studies have addressed the correlation between oxygen vacancies and electrical conductivity. The conductivity could be strongly varied when SrTiO₃ is exposed to vacuum or O₂ ambient. One the other hand, the extended defects (grain boundaries, dislocations, etc.) in SrTiO₃ may also affect the distribution of oxygen vacancies. In this study, the impact of dislocations on oxygen vacancies in un-doped SrTiO₃ single crystal has been investigated by cathodoluminescence (CL). CL results suggest that the accumulation of oxygen vacancies is easily triggered by certain dislocations. However, there is no significantly enhanced diffusion of oxygen vacancies along dislocations.