[15a-D411-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D411-4] Numerical analysis of phosphorus concentration in Si single crystal during directional solidification process

〇Satoshi Nakano¹, Xin Liu¹, Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:dopant, directional solidification method

Generally, we used boron as a p-type dopant and phosphorus as a n-type dopant for bulk doping. Distribution of these impurity concentration in a silicon crystal is related with segregation effect. As the segregation coefficient for boron and phosphorus is small, dopant concentration distribution is inhomogeneous. Inhomogeneous dopant concentration distribution affects the distribution of resistivity in a silicon crystal. Therefore, it is important to control and be uniform dopant concentration distribution in a silicon crystal. In this study, we investigated the effect of evaporation flux from the melt surface on phosphorus concentration distribution during directional solidification process by numerical analysis.